onsemi FDU8882

Power MOSFET, N Channel, 30 V, 55 A, 0.0115 ohm, TO-251AA, Through Hole

Trans MOSFET N-CH 30V 55A 3-Pin (3+Tab) TO-251 Rail

30V,55A,11 OHM, NCH, IPAK, POWER TRENCH MOSFET

Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

003, PLASTIC MOLDED, TO-251 IPAK PKG, THRU-HOLE (39)<AZ

MOSFET N-CH 30V 12.6A/55A IPAK

MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Transistor Case Style:I-PAK; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:TO-251; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.8mm; Lead Spacing:2.285mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:55W; Pulse Current Idm:50A; Reverse Recovery Time trr Typ:82ns; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V