备用零件
Price @ 1000
$ 0.444
Stock
33,928
37,149
Authorized Distributors
0
2
Mount
Through Hole
-
Case/Package
TO-251-3
TO-251
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
35 A
35 A
Threshold Voltage
-
-
Rds On Max
10 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
55 W
70 W
Input Capacitance
1.26 nF
-
相关零件
描述
由其分销商提供的 onsemi FDU8880 的描述。
MOSFETs 30V,58A,10 OHM, NCH PWR TRENCH MOSFET
MOSFET N-CH 30V 13A/58A IPAK
Power Field-Effect Transistor, 35A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
N-CHANNEL POWER MOSFET
new, original packaged
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Current Rating58 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.26 nF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation55 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time91 ns
Turn-Off Delay Time38 ns
Voltage Rating (DC)30 V