供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-15
Lifecycle StatusProduction (Last Updated: 2 months ago)
相关零件
onsemiNTD4805N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 12.7A Ta 95A Tc 95A 2.24W 8ns
onsemiNTD4855N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
onsemiNTD4855N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
描述
由其分销商提供的 onsemi FDU6688 的描述。
MOSFET N-CH 30V 84A I-PAK
Power Field-Effect Transistor, 84A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFETs 30V N-Ch PowerTrench
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)21 A
Current Rating84 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.845 nF
Max Operating Temperature175 °C
Max Power Dissipation83 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation83 W
Rds On Max5 mΩ
Rise Time13 ns
Turn-Off Delay Time62 ns
Voltage Rating (DC)30 V