供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
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Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
STMicroelectronicsSTU75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
描述
由其分销商提供的 onsemi FDU8896 的描述。
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET
MOSFETs 30V N-Channel PowerTrench
MOSFET N-CH 30V 17A/94A IPAK
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating94 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.525 nF
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max5.7 mΩ
Rise Time106 ns
Turn-Off Delay Time53 ns
Voltage Rating (DC)30 V