供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-01
Lifecycle StatusObsolete (Last Updated: 8 months ago)
相关零件
onsemiNTD4809NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 2.3ns
onsemiNTD4810N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4808N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
描述
由其分销商提供的 onsemi FDU6680 的描述。
Trans MOSFET N-CH 30V 12A 3-Pin(3+Tab) IPAK Tube
Power Field-Effect Transistor, 12A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
3.3W(Ta)，56W(Tc) 3V@ 250µA 18nC@ 5V 1individualNChannel 30V 10mΩ@ 12A,10V 1.23pF@15V IPAK Through hole mounting
MOSFETs 30V N-Channel PowerTrench
30V, NCH , IPAK, TO-251, SINGLE
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.23 nF
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max10 mΩ
Rise Time7 ns
Turn-Off Delay Time29 ns