供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-11-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
描述
由其分销商提供的 onsemi FDT86102LZ 的描述。
N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ
FDT86102LZ Series 100 V 6.6 A 28 mOhm N-Channel PowerTrench® MOSFET - SOT-223
100V 6.6A 22m´Î@10V6.6A 2.2W 1.4V@250uA 7.5pF@50V N Channel 1.118nF@50V 8.3nC@4.5V -55¡Í~+150¡Í@(Tj) SOT-223 MOSFETs ROHS
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.6 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 28 / Gate-Source Voltage V = 20 / Fall Time ns = 2.2 / Rise Time ns = 1.9 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 6.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.2
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-223-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight250.2 mg
Technical
Continuous Drain Current (ID)6.6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time2.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.49 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.2 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max28 mΩ
Rise Time1.9 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time6.6 ns
Dimensions
Height1.8 mm
Length3.7 mm
Width6.7 mm