供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
Diodes Inc.ZXMP6A17GTA
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
描述
由其分销商提供的 onsemi FDT458P 的描述。
P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ
Single P-Channel 30 V 210 mOhm 3.5 nC 3 W PowerTrench SMT Mosfet - SOT-223
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.4A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)3.4 A
Current Rating-3.4 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance205 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.1 W
Rds On Max130 mΩ
Rise Time12.5 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.8 mm
Length6.5 mm
Width3.56 mm