Diodes Inc. ZXMP6A17GTA

Name: Diodes Inc. ZXMP6A17GTA
Brand: Diodes Inc.
SKU: ZXMP6A17GTA

MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity: P Channel; Continuous

$ 0.23

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		ZXMP6A17GTA	10,000	1K					0.222	0.208	2d
Newark	3	ZXMP6A17GTA	8,457	1	Cut Tape	1.350	0.885	0.618	0.618	0.618
Verical	2	ZXMP6A17GTA	15,000	1K					0.268	0.216
Arrow Electronics	2	ZXMP6A17GTA	44	44				0.225	0.225	0.225
Future Electronics	2	ZXMP6A17GTA	25,000	1K	Tape & Reel				0.230	0.225

数据表和文档

下载 Diodes Inc. ZXMP6A17GTA 的数据表和制造商文档。

Newark

Datasheet8 页4 年前

Datasheet8 页11 年前

Diodes Inc SCT

IHS

element14 APAC

Future Electronics

库存历史记录

3 个月趋势:

-13.15%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-03-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. ZXMP6A17GTA 的描述。

MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous

Newark

ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223

Future Electronics

Power MOSFET, P Channel, 60 V, 3 A, 0.096 ohm, SOT-223, Surface Mount

Avnet

Trans MOSFET P-CH 60V 4.1A 4-Pin (3+Tab) SOT-223 T/R

Verical

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W

Distrelec

60V P-CHANNEL ENHANCEMENT MODE MOSFET Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

ComSIT Distribution GmbH

MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)

Farnell