MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.3A; Cont Current Id N Channel 3:8.6A; Current Id Max:8.6A; Current Temperature:25°C; Forward Current If(AV):3A; Forward Voltage VF Max:700mV; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Channel 1:28mohm; On State Resistance N Channel 2:16mohm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; SMD Marking:FDS6982S; Termination Type:SMD; Voltage Vds N Channel 1:30V; Voltage Vds N Channel 2:30V; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V