价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | ZXMN3G32DN8TA | 500 | 500 | 2d | ||||||||
| Arrow Electronics | ZXMN3G32DN8TA | 3,500 | 500 | |||||||||
| Verical | ZXMN3G32DN8TA | 3,500 | 500 | |||||||||
| DigiKey | 31-ZXMN3G32DN8TACT-ND | 506 | 1 | Cut Tape | ||||||||
| Future Electronics | ZXMN3G32DN8TA | 0 | 500 | Tape & Reel |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Diodes Inc. ZXMN3G32DN8TA 的描述。
Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R
2.1W 20V 3V@ 250¦ÌA 10.5nC@ 10V 2N 30V 28m¦¸@ 6A,10V 5.5A 472pF@15V SOIC-8 5mm*4mm*1.5mm
MOSFET, NN, SO-8; Module Configuration:Dual N Channel; Transistor Polarity:Dual N; Max Current Id:7.1A; Max Voltage Vds:30V; On State Resistance:0.028ohm; Rds Measurement Voltage:10V; Typ Voltage Vgs th:3V; Power Dissipation:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; Case Style:SOIC; Termination Type:SMD; Transistor Type:MOSFET; Cont Current Id:7.1A; Max Voltage Vgs:20V; Min Voltage Vgs th:1V; On State Resistance @ Vgs = 4.5V:0.045ohm; On State resistance @ Vgs = 10V:0.028ohm; Pulse Current Idm:33.6A; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time9.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance472 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels2
Number of Elements2
Power Dissipation2.1 W
Rds On Max28 mΩ
Resistance45 mΩ
Rise Time3.1 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time2.5 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm