供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-29
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
相关零件
VishaySI9926CDY-T1-GE3
Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8
描述
由其分销商提供的 Infineon IRF7331PBF 的描述。
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET
Trans MOSFET N-CH 20V 7A 8-Pin SOIC Tube
HEXFET Power MOSFET Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:7A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, NN CH, 20V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:28A; SMD Marking:F7331; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:4.5V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time50 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.34 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels2
Number of Elements2
On-State Resistance30 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max30 mΩ
Rise Time22 ns
Threshold Voltage1.2 V
Turn-Off Delay Time110 ns
Turn-On Delay Time7.6 ns
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length5 mm