onsemi FDS6875

Dual P-Channel PowerTrench™ MOSFET, 2.5V Specified, -20V, -6A, 30mΩ

Transistor MOSFET Array Dual P-CH 20V 6A 8-Pin SOIC T/R

Dual P-Channel 20 V 30 mOhm PowerTrench Mosfet - SOIC-8

2W 8V 1.5V@ 250¦ÌA 31nC@ 5V 2P 20V 30m¦¸@ 6A,4.5V 6A 2.25nF@10V SOIC-8 4.9mm*3.9mm*1.75mm

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

MOSFET, DUAL, PP, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6875; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V