供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-07-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRF7821PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7821TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
STMicroelectronicsSTS11NF30L
N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
描述
由其分销商提供的 onsemi FDS4672A 的描述。
N-Channel 40 V 13 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET, 40V, 11A, 13mΩ
N CHANNEL MOSFET, 40V, 11A, SOIC; Transi; N CHANNEL MOSFET, 40V, 11A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance4.766 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation1.2 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max13 mΩ
Resistance13 MΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage1.2 V
Turn-Off Delay Time43 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)40 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm