供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-05-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDS3890 的描述。
N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8
Transistor MOSFET Array Dual N-CH 80V 4.7A 8-Pin SOIC T/R
Avnet Japan
N-Channel Dual PowerTrench® MOSFET, 80V, 4.7A, 44mΩ
MOSFET, NN CH, 80V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:80V; On Resistance Rds(on):34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.7 A
Current47 A
Current Rating4.7 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.18 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation900 mW
Rds On Max44 mΩ
Resistance44 MΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage2.3 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage80 V
Voltage Rating (DC)80 V
Dimensions
Height1.75 mm
Length4.9 mm
Width3.9 mm