价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDPF5N50NZ | 1,480 | 1137 | 19h | ||||||||
| Verical | FDPF5N50NZ | 72,771 | 316 | |||||||||
| Rochester Electronics | FDPF5N50NZ | 408,923 | 16h | |||||||||
| Flip Electronics | FDPF5N50NZ | 370 | 5d | |||||||||
| Farnell | FDPF5N50NZ | 0 | 1 | 16h |
备用零件
Price @ 1000
$ 0.889
$ 0.439
$ 0.439
Stock
2,294,005
659,460
659,460
Authorized Distributors
5
4
4
Mount
Through Hole
-
-
Case/Package
TO-220-3
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
500 V
500 V
500 V
Continuous Drain Current (ID)
4.5 A
5.5 A
5.5 A
Threshold Voltage
-
4.5 V
4.5 V
Rds On Max
1.5 Ω
1.5 Ω
1.5 Ω
Gate to Source Voltage (Vgs)
25 V
30 V
30 V
Power Dissipation
30 W
28 W
28 W
Input Capacitance
440 pF
632 pF
632 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi FDPF5N50NZ 的描述。
N-Channel Power MOSFET, UniFETTM II, 500 V, 4.5 A, 1.5 Ω, TO-220F
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220FP Tube
UniFET2 500V N-channel MOSFET, TO220F Single gage
500 V, 4.5 A, 1.5 OHM N-CHANNEL MOSFET Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, UNITFET, 500V, 4.5A, TO-220; N CH MOSFET, UNITFET, 500V, 4.5A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance440 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation30 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time22 ns
Schedule B8541290080
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Dimensions
Height19.5 mm
Length10.16 mm
Width4.7 mm