供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-23
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
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描述
由其分销商提供的 onsemi FDPC8011S 的描述。
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 25V
Dual N-Channel 25 V 6 mO Surface Mount Asymmetric Mosfet - PowerClip33
POWER TRENCH POWER CLIP 25V ASYMMETRIC DUAL N-CHANNEL MOSFET Small Signal Field-Effect Transistor, 13A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
MOSFET, N-CH, DUAL, 25V/12V, 8PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight192 mg
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vds)25 V
Element ConfigurationDual
Fall Time4 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.24 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.4 V
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation2 W
Rds On Max6 mΩ
Rise Time5 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time38 ns
Dimensions
Height800 µm
Length3.4 mm
Width3.4 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明