备用零件
Price @ 1000
$ 1.004
$ 1.53
Stock
184,003
18,262
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
150 V
-
Continuous Drain Current (ID)
5 A
5 A
Threshold Voltage
-
-
Rds On Max
36 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
150 W
-
Input Capacitance
2.8 nF
-
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-06-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
描述
由其分销商提供的 onsemi FDP2552 的描述。
Transistor MOSFET N Channel 150 Volt 5 Amp 3-Pin 3+ Tab TO-220AB Tube
TRANSISTOR, N-CHANNEL, POWERTRENCH MOSFET, 150V, 37A, 36MOHM, TO-220AB
N-Channel 150 V 36 mOhm PowerTrench® Mosfet - TO-220AB
TO-220AB, SINGLE, N-CH, 150V, 36MOHM ULTRAFET TRENCH MOSFET
N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Drain Source Voltage Vds:150V; Continuous Drain Current Id:5A; Operating Temperature Max:175°C; Product Range:-; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi FDP2552.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)5 A
Current Rating37 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.8 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation150 W
Rds On Max36 mΩ
Resistance32 MΩ
Rise Time29 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)150 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm