Infineon IRFB4615PBF

Name: Infineon IRFB4615PBF
Brand: Infineon
SKU: IRFB4615PBF

IRFB4615PBF N-channel MOSFET Transistor, 35 A, 150 V, 3-Pin TO-220AB

$ 0.656

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet	2	IRFB4615PBF	80	50				0.526	0.485	0.485	4d
Future Electronics	2	IRFB4615PBF	12,350	50	Tube			0.605	0.585	0.540
Arrow Electronics	3	IRFB4615PBF	2,222	1		1.151	0.694	0.694	0.694	0.694
Rutronik		TMOSP12132	1,300	50				0.755	0.604	0.604	5h
Rochester Electronics		IRFB4615PBF	578,569					0.791	0.656	0.585	21h

数据表和文档

下载 Infineon IRFB4615PBF 的数据表和制造商文档。

Newark

Datasheet9 页17 年前

Datasheet8 页17 年前

iiiC

库存历史记录

3 个月趋势:

+120%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRFB4615PBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-09-05

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon IRFB4615PBF 的描述。

IRFB4615PBF N-channel MOSFET Transistor, 35 A, 150 V, 3-Pin TO-220AB

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 150V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 35A TO-220AB

Win Source

Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 150 V, 35 A, 0.032 ohm, TO-220AB, Through Hole

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N-CH, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:35A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon