onsemi FDN86501LZ

Name: onsemi FDN86501LZ
Brand: onsemi
SKU: FDN86501LZ

N-Channel PowerTrench® MOSFET, Shielded Gate, 60 V, 2.6 A, 116 mΩ

$ 0.946

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	FDN86501LZ	1,909	676					0.987	0.940	3d
Newark	2	FDN86501LZ	2,624	5	Cut Tape		1.870	1.290	1.170	1.170
Verical	3	FDN86501LZ	1,272	2			1.037	0.964	0.941	0.809
Arrow Electronics	3	FDN86501LZ	1,272	1		1.209	1.037	0.964	0.941	0.941
Rochester Electronics		FDN86501LZ	49,961					1.140	0.946	0.844	21h

数据表和文档

下载 onsemi FDN86501LZ 的数据表和制造商文档。

onsemi

Datasheet7 页3 年前

Datasheet0 页0 年前

Upverter

IHS

Master Electronics

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-1.76%

CAD 模型

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2015-05-15

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDN86501LZ 的描述。

N-Channel PowerTrench® MOSFET, Shielded Gate, 60 V, 2.6 A, 116 mΩ

onsemi

PT5 100/20V Nch PowerTrench MOSFET - MOLDED PACKAGE, SUPERSOT, 3 LEAD

Newark

Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R

Richardson RFPD

1.5W(Ta) 20V 3V@ 250¦ÌA 5.4nC@ 10 V 1N 60V 116m¦¸@ 2.6A,10V 2.6A 335pF@30V SOT-23-3 2.92mm*1.4mm*940¦Ìm

UnikeyIC

N-Channel Shielded Gate Power Trench MOSFET

Verical

场效应管, MOSFET, N沟道, 60V, 2.6A, 150度 C, 1.5W;

element14 APAC

Small Signal Field-Effect Transistor

IHS

MOSFET, N-CH, 60V, 2.6A, SUPERSOT;

Farnell

60V 2.6A 89m´Î@10V2.6A 1.5W 1.9V@250uA 4.9pF@30V N Channel 236pF@30V 1.9nC@0~4.5V -55¡Í~+150¡Í@(Tj) SSOT-3 MOSFETs ROHS

Dasenic

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.

Fairchild Semiconductor