Infineon IRLML0060TRPBF

Transistor MOSFET N-Ch. 60V 2, 7A 1, 25W 0, 092Ohm SOT23 IRLML0060TRPBF
$ 0.164
Production

价格与库存

数据表和文档

下载 Infineon IRLML0060TRPBF 的数据表和制造商文档。

Newark

Datasheet10 页9 年前

IHS

element14 APAC

SOS electronic

iiiC

库存历史记录

3 个月趋势:
-10.04%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRLML0060TRPBF 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
EE Concierge
符号封装
SnapEDA
封装
下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-02
Lifecycle StatusProduction (Last Updated: 4 weeks ago)

相关零件

60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
SQ2308CES Series 60 V 150 mOhm Surface Mount N-Channel Mosfet - SOT-23-3
Diodes Inc.DMN6075S-7
Single N-Channel 60 V 120 mOhm 12.3 nC 0.8 W Silicon Mosfet - SOT-23
onsemiFDN5630
N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3
SQ2362ES Series 60 V 0.068 Ohm 4.3 A SMT Automotive N-Channel Mosfet - SOT-23
Single P-Channel 60 V 1 W 6 nC Silicon Surface Mount Mosfet - SOT-23

描述

由其分销商提供的 Infineon IRLML0060TRPBF 的描述。

Transistor MOSFET N-Ch. 60V 2,7A 1,25W 0,092Ohm SOT23 IRLML0060TRPBF
60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 60 V 116 mOhm 2.5 nC 1.25 W Silicon SMT Mosfet - SOT-23
Power MOSFET, N Channel, 60 V, 2.7 A, 0.092 ohm, SOT-23, Surface Mount
MOSFET, 60V, 2.7A, 92 MOHM, 2.5 NC QG, SOT-23
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N CH, 60V, 2.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.25W; Voltage Vgs Max:16V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 116 / Gate-Source Voltage V = 16 / Fall Time ns = 4.2 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 6.8 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25

制造商别名

Infineon 在全球拥有多个品牌,分销商可将其用作替代名称。Infineon 也可称为以下名称:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

零件编号别名

该零件可能有以下备用零件编号:

  • IRFIRLML0060TRPBF
  • IRLML0060
  • IRLML0060TRPBF.
  • SP001568948