onsemi FDN86265P

P-Channel PowerTrench® MOSFET -150V, -0.8A, 1.2Ω
$ 0.621
Production
数据表
制造商页面

价格与库存

查看所有价格优惠
分销商
SKU
最小
Pkg
批量定价
Newark
3
FDN86265P
0
1
Cut Tape
USD
1.810
1.810
0.769
0.594
0.570
Mouser
512-FDN86265P
292
1
Tape & Reel
USD
1.990
1.240
0.822
0.579
0.529
Onlinecomponents.com
FDN86265P
0
500
Bulk
USD
0.626
0.538
Master Electronics
FDN86265P
0
500
USD
0.626
0.538
Future Electronics
FDN86265P
0
3K
Tape & Reel
USD
1.150

数据表和文档

下载 onsemi FDN86265P 的数据表和制造商文档。

Master Electronics

Datasheet0 页0 年前

onsemi

IHS

Upverter

Future Electronics

库存历史记录

3 个月趋势:
-88.90%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDN86265P 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D
下载
EE Concierge
符号封装
SnapEDA
符号封装
3D
下载
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-05-23
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)

相关零件

onsemiCPH3462-TL-W
N-Channel Power MOSFET, 100V, 1A, 785mΩ
详细信息
Diodes Inc.ZXMP10A13FQTA
P-Ch MOSFET 100V 20V 4V@250µA 1.8nC@5V 1Ω@600mA,10V 600mA 141pF@50V SOT-23-3 SMD 1.12mm H
详细信息
Diodes Inc.DMN13H750S-7
N-Ch MOSFET 130V 1A 750mΩ@2A,10V 4V@250µA Qg 5.6nC@10V 231pF@25V 770mW Ta SOT-23-3 SMD 2.9mm × 1.3mm × 1.03mm
详细信息
onsemiNTR1P02T1
MOSFET P-CH 20V 1A SOT23-3 / P-Channel 20 V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
详细信息
onsemiFDN86246
FDN86246 Series 150 V 1.6 A 261 mOhm N-Ch PowerTrench Mosfet - SuperSOT-3
详细信息
InfineonIRLML5103TRPBF
INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
详细信息

描述

由其分销商提供的 onsemi FDN86265P 的描述。

P-Channel PowerTrench® MOSFET -150V, -0.8A, 1.2Ω
onsemi
Power MOSFET, P Channel, 150 V, 800 mA, 0.85 ohm, SuperSOT, Surface Mount
EBV Elektronik
MOSFET, P-CH, -150V, -0.8A, SUPERSOT-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -800mA; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
Farnell
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Fairchild Semiconductor

图片

RS
element14 APAC
Future Electronics

制造商别名

onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON Semiconductor / Fairchild
  • ON SEMICOND
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • onsemi / Fairchild
  • ON SEMICONDUCTOR CORP
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd