供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDN342P 的描述。
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2A, 80mΩ
MOSFET - P-Channel, POWERTRENCH, Specified Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V).
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):62mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:1.05V; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:SuperSOT; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-1.05V; Voltage Vgs Rds on Measurement:4.5V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating-2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance635 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.05 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1.05 V
Turn-Off Delay Time9 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.12 mm
Length2.92 mm
Width1.4 mm