供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-07-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi FDMS8888 的描述。
N-Ch MOSFET 20V 30V 9.5mΩ@13.5A,10V 13.5A 21A 1.585nF@15V QFN SMD 6mm × 5mm × 1.1mm
30V 51A 80m´Î@10V13.5A 42W 1.9V@250uA 161pF@15V N Channel 1.195nF@15V 13nC@0~5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS
MOSFET, N CH, 30V, 21A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Embedded - Microcontrollers 1 (Unlimited) 100-LQFP 55 16K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit RENESAS R5F562TAADFP#V132 Bit Microcontroller, RX, 100MHz, Memory 256KB, RAM 16KB, CAN, I2C, SPI, UART, LQFP-100
The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight74 mg
Technical
Continuous Drain Current (ID)13.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.585 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements1
Power Dissipation42 W
Rds On Max9.5 mΩ
Rise Time6 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time9 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm