Infineon BSC080N03LSGATMA1

Name: Infineon BSC080N03LSGATMA1
Brand: Infineon
SKU: BSC080N03LSGATMA1

Transistor Mosfet N-ch 30V 53A 8-PIN Pg-tdson T/r

$ 0.312

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSC080N03LSGATMA1	4					0.376	0.312	0.279	22h
Farnell	3	BSC080N03LSGATMA1	0	1	Cut Tape	0.864*	0.740*	0.740*	0.740*	0.740*	8h
Microchip USA		BSC080N03LSGATMA1	314	600	Tray				1.969	1.969	15h
Weyland Electronics Group Pte. Ltd.		BSC080N03LSG	3,357	1	Tape & Reel	0.224	0.224	0.224	0.224	0.224	1d
Win Source	3	WS-BSC080N03LSGATMA1	5,330	70				0.732	0.488	0.488	23h

数据表和文档

下载 Infineon BSC080N03LSGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页12 年前

_legacy Avnet

element14 APAC

TME

iiiC

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-03-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon BSC080N03LSGATMA1 的描述。

Transistor MOSFET N-CH 30V 53A 8-Pin PG-TDSON T/R

Avnet Japan

2.5W 20V 16nC@ 10V 1N 30V 8m¦¸@ 10V 1.3nF@ 15V TDSON-8 , 5.9mm*5.15mm*1.27mm

UnikeyIC

30V 14A 35W 8mΩ@10V,30A 2.2V@250uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

ODG (Origin Data Global)

MOSFET, N CHANNEL, 30V, 53A, PG-TSDSON

Newark

Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

BSC080N03 - 12V-300V N-CHANNEL P

DigiKey Marketplace

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon