onsemi FDMS86500DC

Name: onsemi FDMS86500DC
Brand: onsemi
SKU: FDMS86500DC

PT7 60V/20V Nch Dual Cool PowerTrench MOSFET - 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM

$ 1.93

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Distributor		SKU		Min	Pkg
Avnet	2	FDMS86500DC	9,000	582					1.776	1.507	2d
Newark	2	FDMS86500DC	4,372	5	Cut Tape		3.120	2.210	2.130	2.130
Verical	2	FDMS86500DC	3,000	186					1.813	1.713
Rochester Electronics		FDMS86500DC	3,543					1.620	1.450	1.370	2h
DigiKey	3	FDMS86500DCFSCT-ND	3,201	1	Cut Tape	4.900	3.239	2.296	1.991	1.991

数据表和文档

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Master Electronics

Datasheet0 页0 年前

onsemi

IHS

Upverter

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-17.67%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-12-08

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMS86500DC 的描述。

PT7 60V/20V Nch Dual Cool PowerTrench MOSFET - 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM

Newark

N-Channel Power Trench® MOSFET, Dual CoolTM 56, 60V, 108A, 2.3mΩ

onsemi

N-Channel 60V 108A 0.0023 Ohm SMT PowerTrench Mosfet - Dual Cool-56

Future Electronics

Power Field-Effect Transistor, 29A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

Semicontronic

MOSFET, N-CH, 60V, 108A, DUAL COOL 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:108A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

element14 APAC

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremelylow Junction-to-Ambient thermal resistance.

Fairchild Semiconductor