数据表和文档
下载 onsemi FDMS86322 的数据表和制造商文档。
官方数据表10 年前
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-10-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
VishaySI7478DP-T1-E3
Single N-Channel 60 V 0.0075 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
VishaySUD23N06-31-GE3
Mosfet; Power; N-ch; Vdss 60V; Rds(on) 0.025 Ohm; Id 25A; TO-252; Pd 50W; Vgs +/-20V; -55
描述
由其分销商提供的 onsemi FDMS86322 的描述。
N-Channel Shielded Gate PowerTrench® MOSFET 80V, 60A, 7.65mΩ
N-Channel 80 V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6
Power Field-Effect Transistor, 13A I(D), 80V, 0.00765ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 80V, 60A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance7.65 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.5 W
Rds On Max7.65 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time27 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm