onsemi FDMS86104

Name: onsemi FDMS86104
Brand: onsemi
SKU: FDMS86104

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 16A, 24mΩ

$ 1.179

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark	2	FDMS86104	1,960	5	Cut Tape		2.510	1.880	1.600	1.600
Verical	4	FDMS86104	792	6			1.208	1.188	1.159	1.159
Arrow Electronics		FDMS86104	792	1		1.308	1.208	1.188	1.159	1.159
Master Electronics		FDMS86104	2,500	25				1.017	0.945	0.922
Onlinecomponents.com		FDMS86104	2,500	25	Bulk			1.017	0.945	0.922

数据表和文档

下载 onsemi FDMS86104 的数据表和制造商文档。

Master Electronics

Datasheet0 页0 年前

IHS

onsemi

Fairchild Semiconductor

Future Electronics

库存历史记录

3 个月趋势:

-37.90%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDMS86104 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-08-10

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMS86104 的描述。

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 16A, 24mΩ

onsemi

N-Channel 100 V 16 A 24 mOhm Surface Mount PowerTrench® Mosfet - Power56

Future Electronics

Power Field-Effect Transistor, 7A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

Semicontronic

MOSFET, N CH, 100V, 16A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:73W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor