供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-12-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDMS86181 的描述。
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
onsemi NChannel EnhancedMOSTube, Vds=100 V, 124 A, PQFN8encapsulation, surface mount, 8Pin
Transistor MOSFET N-CH 100V 124A 8-Pin Power 56 T/R
Avnet Japan
MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 124A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)124 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.125 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.2 mΩ
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time25 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1 mm