onsemi FDMS86181

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
$ 1.38
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
Avnet
2
FDMS86181324,000747
3d
NewarkFDMS861811,3281Cut Tape
Rochester ElectronicsFDMS8618113,703
9h
DigiKey
2
FDMS86181CT-ND2281Cut Tape
Onlinecomponents.comFDMS86181025Bulk

数据表和文档

下载 onsemi FDMS86181 的数据表和制造商文档。

IHS

Datasheet7 页3 年前
Datasheet0 页0 年前

Master Electronics

onsemi

Farnell

Future Electronics

库存历史记录

3 个月趋势:
+20.40%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDMS86181 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
EE Concierge
符号封装
SnapEDA
封装
下载
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-12-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

相关零件

InfineonBSC040N10NS5ATMA1
On a Reel of 5000, N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC040N10NS5ATMA1
详细信息
onsemiFDMS86150ET100
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 128A, 4.85mΩ
详细信息
VishaySUM70040E-GE3
VISHAY SUM70040E-GE3 MOSFET Transistor, N Channel, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
详细信息
VishaySUM70060E-GE3
Power MOSFET, N Channel, 100 V, 131 A, 0.0056 ohm, TO-263 (D2PAK), Surface Mount
详细信息
InfineonBSC035N10NS5ATMA1
2.5W 20V 3.8V 70nC@ 10V 2N 100V 3.5m¦¸@ 10V 95A 5nF@ 50V SON , 5.15mm*590cm*1mm
详细信息
InfineonIPB140N08S404ATMA1
80V, N-Ch, 4.2 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS
详细信息

描述

由其分销商提供的 onsemi FDMS86181 的描述。

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
onsemi
Transistor MOSFET N-CH 100V 124A 8-Pin Power 56 T/R
Avnet Japan
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes |Onsemi FDMS86181
Newark
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Fairchild Semiconductor

图片

Newark
Farnell
Augswan

制造商别名

onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd