价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SUM70060E-GE3 | 12,800 | 800 | 1d | ||||||||
| Newark | SUM70060E-GE3 | 800 | 1 | |||||||||
| Arrow Electronics | SUM70060E-GE3 | 800 | 800 | |||||||||
| Verical | SUM70060E-GE3 | 800 | 800 | |||||||||
| DigiKey | SUM70060E-GE3CT-ND | 24,116 | 1 | Cut Tape |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-05-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Vishay SUM70060E-GE3 的描述。
Power MOSFET, N Channel, 100 V, 131 A, 0.0056 ohm, TO-263 (D2PAK), Surface Mount
N-Channel 100 V 5.6 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263
MOSFET N-CH 100V 131A TO263 / N-Channel 100 V 131A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Trans MOSFET N-CH 100V 131A 3-Pin(2+Tab) D2PAK
N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SUM70060E-GE3
Power Field-Effect Transistor, 131A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)131 A
Drain to Source Resistance6.2 mΩ
Drain to Source Voltage (Vdss)100 V
Input Capacitance3.33 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max5.6 mΩ
Schedule B8541290080