供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
VishaySI4190ADY-T1-GE3
MOSFET, N-CH, 100V, 18.4A, SOIC-8; Transistor Polarity:N Channel; Continuous Dra
描述
由其分销商提供的 onsemi FDMS86101DC 的描述。
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 100V, 60A, 7.5mΩ
Power MOSFET, N Channel, 100 V, 60 A, 0.0075 ohm, Dual Cool 56, Surface Mount
TAPE REEL/PT5 100V/20V Nch Dual Cool PowerTrench MOSFET.
Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
3.2W(Ta)，125W(Tc) 20V 4V@ 250µA 44nC@ 10 V 1individualNChannel 100V 7.5mΩ@ 14.5A,10V 14.5A，60A 3.135nF@50V PQFN-8 SMD mount 5mm*5.75mm*1.05mm
MOSFET, N-CH, 100V, 60A, DUAL COOL 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)14.5 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time5.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.135 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation125 W
Rds On Max7.5 mΩ
Resistance7.5 MΩ
Rise Time8.2 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time14 ns
Dimensions
Height1.05 mm
Length5.1 mm
Width5.85 mm