供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
STMicroelectronicsSTD75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
InfineonIRFH3702TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
描述
由其分销商提供的 onsemi FDMS7650 的描述。
Trans MOSFET N-CH Si 30V 36A 8-Pin PQFN EP T/R / MOSFET N-CH 30V POWER56
2.5W(Ta),104W(Tc) 20V 3V 288nC 2N 30V 990¦Ì¦¸@ 36A,10V 36A,100A 14.965nF@15V PQFN 1.1mm
N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
MOSFET,N CH,30V,36A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)36 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance990 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.965 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max990 µΩ
Resistance1 MΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time83 ns
Turn-On Delay Time28 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm