供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-12-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDMS5672 的描述。
N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ
Trans MOSFET N-CH Si 60V 10.6A 8-Pin Power 56 T/R
Power Field-Effect Transistor, 10.6A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 60V 11.5 Mohm Mlp Rohs Compliant: Yes
onsemi NMOS UltraFET, Vds=60 V, 10.6 A, MLP8, , 8
MOSFET N-CH 60V 10.6A/22A 8MLP
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:10.6A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; SMD Marking:FDMS5672; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight231 mg
Technical
Continuous Drain Current (ID)10.6 A
Current Rating22 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3.2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation78 W
Rds On Max11.5 mΩ
Resistance11.5 MΩ
Rise Time17 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3.2 V
Turn-Off Delay Time22 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)60 V
Dimensions
Height800 µm
Length5 mm
Width6 mm