数据表和文档
下载 onsemi FDS5670 的数据表和制造商文档。
官方数据表7 年前
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-08-01
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
相关零件
InfineonIRF7478TRPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7478PBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
描述
由其分销商提供的 onsemi FDS5670 的描述。
N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ
N-Channel 60 V 14 mOhm SMT PowerTrench Mosfet SOIC-8
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Current10 A
Current Rating10 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vds)60 V
Dual Supply Voltage60 V
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage2.4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time16 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明