供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-02-24
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2025-01-05
LTD Date2025-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
相关零件
描述
由其分销商提供的 onsemi FDME510PZT 的描述。
P-Channel PowerTrench® MOSFET -20V, -6A, 37mΩ
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 20V 6A 6-Pin MicroFET T/R
MOSFET, P CH, 20V, 6A, MFET1.6X1.6; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.49 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-500 mV
Number of Channels1
Number of Elements1
Power Dissipation700 mW
Rds On Max37 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage-500 mV
Turn-Off Delay Time93 ns
Turn-On Delay Time6.5 ns
Dimensions
Height550 µm
Length1.6 mm
Width1.6 mm