onsemi FDME1023PZT

Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ

Dual P-Channel 20 V 530 mOhm 7.7 nC 1.4 W PowerTrench SMT Mosfet - MICROFET-6

20V 2.6A 95m´Î@4.5V2.3A 1.4W 600mV@250uA 50pF@10V 2 P-Channel 305pF@10V 5.5nC@4.5V -55¡Í~+150¡Í@(Tj) MicroFET(1.6x1.6) MOSFETs ROHS

MOSFET, PP CH, 20V, 2.6A, MFET1.6X1.6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.