价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DMN2300UFB4-7B | 10,000 | 10K | 17h | ||||||||
| Newark | DMN2300UFB4-7B | 7,602 | 5 | Cut Tape | ||||||||
| Verical | DMN2300UFB4-7B | 190 | 190 | |||||||||
| Arrow Electronics | DMN2300UFB4-7B | 190 | 190 | |||||||||
| TME | DMN2300UFB4-7B | 0 | 1 | 4h |
备用零件
Price @ 1000
$ 0.1
$ 0.191
$ 0.191
Stock
4,330,659
17,479,680
17,479,680
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DFN
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
20 V
20 V
20 V
Continuous Drain Current (ID)
1.3 A
1.3 A
1.3 A
Threshold Voltage
950 mV
700 mV
700 mV
Rds On Max
175 mΩ
160 mΩ
160 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
8 V
Power Dissipation
500 mW
500 mW
500 mW
Input Capacitance
64.3 pF
162 pF
162 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.DMN2250UFB-7B
Mosfet, N-Ch, 20V, 1.35A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2250UFB-7B
Diodes Inc.DMP21D0UFB4-7B
DMP21D0UFB4 Series 20V 770 mA 495 mOhm P-Ch Enhancement Mode Mosfet-X2-DFN1006-3
描述
由其分销商提供的 Diodes Inc. DMN2300UFB4-7B 的描述。
N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3
Power MOSFET, N Channel, 20 V, 1.3 A, 0.175 ohm, X2-DFN1006, Surface Mount
Trans MOSFET N-CH 20V 1.3A Automotive 3-Pin X2-DFN T/R
MOSFET, N-CH, 20V, X2DFN1006-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.175ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV; P
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance64.3 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation470 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation500 mW
Rds On Max175 mΩ
Resistance175 mΩ
Rise Time2.8 ns
Schedule B8541210080
Threshold Voltage950 mV
Turn-Off Delay Time38 ns
Turn-On Delay Time3.5 ns
Dimensions
Height400 µm
Length1.05 mm
Width650 µm