供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-06-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-01-10
LTD Date2018-07-10
描述
由其分销商提供的 onsemi FDMC8884 的描述。
N-Channel 30 V 19 mOhm Surface Mount Power Trench Mosfet - Power 33
MOSFET, N CH, 30V, 15A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Mosfet, N Channel, 30V, 15A, Mlp 3.3X3.3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:15A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):0.016Ohm; Tensión Vgs De Medición Rds(On):10V |Onsemi FDMC8884.
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance685 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation18 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max19 mΩ
Resistance19 MΩ
Rise Time2 ns
Threshold Voltage1.9 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明