供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-05-21
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
描述
由其分销商提供的 onsemi FDMC8882 的描述。
N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ
Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R
Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0143ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET N-CH 30V 10.5A/16A 8MLP
2.3W(Ta),18W(Tc) 20V 2.5V@ 250¦ÌA 20nC@ 10V 1N 30V 14.3m¦¸@ 10.5A,10V 10.5A,16A 945pF@15V MLP-8 3.3mm*3.3mm*730¦Ìm
IC MCU 32BIT 256KB FLASH 144LQFP
Single PT4, NCH, 30/20V in MLP 3.3x3.3 8L
MOSFET, N CH, 30V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0124ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/Package0124
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)10.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance945 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation18 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max14.3 mΩ
Resistance14.3 MΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time17 ns
Turn-On Delay Time7 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm