供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-06-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonBSZ0902NSATMA1
Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FDMC8200 的描述。
Dual N-Channel PowerTrench® MOSFET 30V, 9.5mΩ and 20mΩ
MOSFET 2N-CH 30V 8A/12A POWER33 / Trans MOSFET N-CH Si 30V 18A 8-Pin WDFN EP T/R
FDMC8200 Series 30 V 8 A/12 A SMT Dual N-Ch PowerTrench® MOSFET - POWER-33
MOSFET,NN CH,30V,18A,POWER33; Module Configuration:Dual; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.2W
This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.3 V
Number of Elements2
PackagingDigi-Reel®
Power Dissipation2.2 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage2.3 V
Turn-Off Delay Time38 ns
Dimensions
Height750 µm
Length3 mm
Width3 mm