价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDMC4435BZ | 2,305,362 | 910 | 1d | ||||||||
| Future Electronics | FDMC4435BZ | 36,000 | 3K | Tape & Reel | ||||||||
| Newark | FDMC4435BZ | 63,859 | 5 | Cut Tape | ||||||||
| Rochester Electronics | FDMC4435BZ | 34,496 | 3h | |||||||||
| DigiKey | FDMC4435BZCT-ND | 6,321 | 1 | Cut Tape |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-04-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRFHM9391TRPBF
Single P-Channel 30 V 22.5 mOhm 48 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
描述
由其分销商提供的 onsemi FDMC4435BZ 的描述。
PQFN 3X3,-30V,-20A,20.0m ohm,PCH POWER TRENCH MOSFET
P-Channel Power Trench® MOSFET -30V, -18A, 20mΩ
MOSFET, P CH, -30V, 0.015OHM, -18A, MLP-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)8.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.045 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.3 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time6 ns
Schedule B8541290080
Threshold Voltage-1.9 V
Turn-Off Delay Time35 ns
Turn-On Delay Time10 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm