供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-12
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
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MOSFET P-CH 30V 14.9A 8SOIC / Trans MOSFET P-CH 30V 14.9A 8-Pin SOIC N T/R
Diodes Inc.DMP3020LSS-13
DMP3020LSS: 30 V 14 mOhm Single P-Channel Enhancement Mode Mosfet - SOIC-8
描述
由其分销商提供的 onsemi FDMC6675BZ 的描述。
P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ
Transistor, MOSFET, P-CH, 30V, 9.5A, 8-WDFN
P-Channel 30 V 20 A 14.4 mOhm 36 W SMT MOSFET - PowerWDFN-8
Trans MOSFET P-CH Si 30V 9.5A 8-Pin WDFN EP T/R
Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)9.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance14.4 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.865 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation36 W
Rds On Max14.4 mΩ
Resistance14.4 MΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage-1.9 V
Turn-Off Delay Time44 ns
Turn-On Delay Time11 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm