供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRF7201TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
InfineonIRF7201PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
描述
由其分销商提供的 onsemi FDMA530PZ 的描述。
P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ
30 Volt P Channel PowerTrench Mosfet 6.8A RDSon 35mR
MOSFET P-CH 30V 6.8A MLP2X2 / Trans MOSFET P-CH 30V 6.8A 6-Pin WDFN EP T/R
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-6.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:25V; Threshold Voltage, Vgs Typ:-2.1V
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)6.8 A
Current Rating-6.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.07 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs25 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation900 mW
Rds On Max35 mΩ
Resistance35 MΩ
Rise Time21 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.1 V
Turn-Off Delay Time43 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)-30 V
Dimensions
Height800 µm
Length2 mm
Width2 mm