Infineon IRF7201TRPBF

Name: Infineon IRF7201TRPBF
Brand: Infineon
SKU: IRF7201TRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.03 Ohm; Id 7.3A; SO-8; Pd 2.5W; Vgs +/-20V; -55D

$ 0.524

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF7201TRPBF	10	1		0.574	0.574	0.574	0.574	0.574
RS (Formerly Allied Electronics)		IRF7201TRPBF	0	20	Bulk			0.495	0.473	0.473	4h
Farnell	3	IRF7201TRPBF	0	1	Cut Tape	0.885*	0.603*	0.603*	0.603*	0.603*	10h
Microchip USA		IRF7201TRPBF	2,626	3K						0.944	5h
Verical		IRF7201TRPBF	10	7			0.560	0.560	0.560	0.560

数据表和文档

下载 Infineon IRF7201TRPBF 的数据表和制造商文档。

IHS

Datasheet7 页21 年前

Farnell

TME

element14 APAC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-100%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1994-05-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRF7201TRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d

RS (Formerly Allied Electronics)

Single N-Channel 30V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

MOSFET N-CH 30V 7.3A 8-SOIC / Trans MOSFET N-CH Si 30V 7.3A 8-Pin SOIC T/R

Win Source

N CHANNEL MOSFET, 30V, 7A; Transistor PO; Polarity:N Channel; Continuous Drain Current Id:7A; Source

element14 APAC

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N-CH, 30V, 7.3A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; R; Available until stocks are exhausted Alternative available

Farnell

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.3 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

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