onsemi FDG6332C

Name: onsemi FDG6332C
Brand: onsemi
SKU: FDG6332C

Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70

EOL

制造商页面数据表

价格与库存

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非授权经销商

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Distributor		SKU		Min	Pkg
Avnet		FDG6332C	14,281	589						4h
Flip Electronics		FDG6332C	425,281							6d
Newark	2	FDG6332C	0	3K	Cut Tape				0.251
Farnell	3	FDG6332C	0	5	Cut Tape	0.690*	0.306*	0.256*	0.232*	1d
element14 APAC	2	FDG6332C	0	5	Cut Tape	0.288*	0.256*	0.190*	0.179*	15h

数据表和文档

下载 onsemi FDG6332C 的数据表和制造商文档。

IHS

Datasheet10 页2 年前

Datasheet8 页0 年前

Future Electronics

element14 APAC

Upverter

onsemi

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date2001-10-11

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-06-21

LTD Date2022-12-21

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDG6332C 的描述。

Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70

Jameco

Dual N & P-Channel 20 V 300 mOhm PowerTrench Mosfet SC70-6

Future Electronics

Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

MOSFET, DUAL, NP, SMD, SC70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:700mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.1V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

Fairchild Semiconductor