供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-31
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
相关零件
描述
由其分销商提供的 onsemi FDG410NZ 的描述。
N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ
Trans MOSFET N-CH 20V 2.2A 6-Pin SC-70 T/R
MOSFET 20V Single NChannel PowerTrench MOSFET
Power Field-Effect Transistor, 2.2A I(D), 20V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TAPE REEL/Single PT4 N Z 20/8V in SC70-6
MOSFET, N-CH, 2.2A, 20V, SC-70; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; Po
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)8 V
Input Capacitance535 pF
Max Operating Temperature150 °C
Max Power Dissipation420 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation420 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time2.3 ns
Schedule B8541210080
Turn-Off Delay Time18 ns
Turn-On Delay Time5.3 ns