Diodes Inc. DMN2112SN-7

Name: Diodes Inc. DMN2112SN-7
Brand: Diodes Inc.
SKU: DMN2112SN-7

Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23

$ 0.52

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	DMN2112SN-7	0	250	Bulk				0.520	0.380	8h
Farnell	DMN2112SN-7	0	5			0.524*	0.270*	0.137*	0.106*	16h
Win Source	WS-DMN2112SN-7	22,138	400					0.120	0.097	17h
NetSource Technology	DMN2112SN-7	2,500			1.500	1.500	1.500	1.500	1.500	1h
Esaler Electronic	DMN2112SN-7	3,000			0.103	0.102	0.101	0.100	0.099	9h

数据表和文档

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IHS

Datasheet6 页3 年前

element14 APAC

RS (Formerly Allied Electronics)

Diodes Inc SCT

Future Electronics

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Diodes Inc.DMN2112SN-7

InfineonIRLML2402TRPBF

Price @ 1000

$ 0.52

$ 0.335

Stock

194,114

8,106,450

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

1.2 A

760 mA

Threshold Voltage

1.2 V

700 mV

Rds On Max

100 mΩ

250 mΩ

Gate to Source Voltage (Vgs)

8 V

12 V

Power Dissipation

500 mW

340 mW

Input Capacitance

220 pF

110 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date2007-02-15

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-02-17

LTD Date2022-02-17

描述

由其分销商提供的 Diodes Inc. DMN2112SN-7 的描述。

Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23

Future Electronics

Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R

Verical

Transistor - FET N-Channel 20V 1.2A

Mouser

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

N-Channel Mosfet, 20V VDS, 8±V VGS

Diodes Inc SCT

Mosfet Bvdss: 8V~24V Sc59 T&r 3K

Newark

N-CHANNEL ENHANCEMENT MODE FET SC-59

RS (Formerly Allied Electronics)

MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC