供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 12 hours ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 12 hours ago)
相关零件
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Diodes Inc.DMN2112SN-7
Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
描述
由其分销商提供的 onsemi FDG313N 的描述。
N-Channel 25 V 450 mOhm Surface Mount Digital FET Mosfet - SC-70-6
FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV
MOSFET, N, SMD, 6-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:950mA; Package / Case:SC-70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)950 mA
Current Rating950 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time8.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation750 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time8.5 ns
Threshold Voltage800 mV
Turn-Off Delay Time17 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)25 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm