onsemi FDG1024NZ

Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ

Transistor MOSFET Array Dual N-CH 20V 1.2A 6-Pin SC-70 T/R

Dual N-Channel 20 V 175 mO 360 mW Surface Mount PowerTrench® Mosfet SC-70-6

MOSFET, DUAL N CH, 20V, 1.2A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:360mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.