供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-09-30
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
Diodes Inc.DMG4511SK4-13
Mosfet, Dual, N/P-Ch, 35V, 5.3A Rohs Compliant: Yes |Diodes Inc. DMG4511SK4-13
描述
由其分销商提供的 onsemi FDD86252 的描述。
Shielded Gate PowerTrench® MOSFET, N-Channel, 150 V, 27 A, 52 mΩ
Trans MOSFET N-CH Si 150V 5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 5A DPAK
Power Field-Effect Transistor, 5A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 150V, 42A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance52 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance985 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max52 mΩ
Rise Time1.8 ns
Schedule B8541290080
Threshold Voltage3.1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8.3 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm