供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-28
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2023-12-30
LTD Date2024-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
相关零件
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Single N-Channel 55 V 500 mOhm 35 W V Ipower M0 Technology SMT Mosfet - TO-252-3
描述
由其分销商提供的 onsemi FDD8451 的描述。
N-Channel 40 V 24 mOhm Surface Mount PowerTrench® Mosfet - TO-252-3
PowerTrench® MOSFET, N-Channel, 40V, 28A, 24mΩ
Power Field-Effect Transistor, 9A I(D), 40V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
30W(Tc) 20V 3V@ 250¦ÌA 20nC@ 10V 1individualNChannel 40V 24m¦¸@ 9A,10V 9A£¬28A 990pF@20V D-PAK£¬TO-252 SMD mount 6.73mm*6.22mm*2.39mm
MOSFET, N CH, 40V, 28A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance990 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
Power Dissipation30 W
Rds On Max24 mΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm